Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor

We report the effect of stress or strain on electronic characteristics a normally off AlGaN/GaN high electron mobility transistor (HEMT) and demonstrate its role as highly sensitive pressure sensor. observe that HEMT drain current exhibits linear change 2.5%/bar upon application pressure, which is translated to sensitivity 1250 ppm−1. This highest ever reported HEMTs many other conventional sensing configurations. The relative largest when gate bias near-threshold slightly larger than saturation bias. sheet density changes in heterointerface under applied mechanical are explained qualitatively. spontaneous piezoelectric-polarization-induced surface interface charges heterojunction can be used develop very robust sensors. results considerable potential for reliable applications with low energy consumption.